 (2)->
正しい式 
Table 2. (Summary of calculation results from each measurements which are correlation with THz radiation.))
Sample
|
Depletion
Layer w [nm]
|
Diffusion Potential VD [eV]
|
Electric field
EMax [Mv/cm]
|
 （４）
|
|
Sn doped (010)
|
16
|
1,59
|
1.9
|
28.9
12.9
42.35
46.8
|
|
Sn doped (-201)
|
26
|
1.10
|
0.85
|
|
Uid doped
(010)
|
112
|
1.61
|
0.28
|
|
Uid doped
(-201)
Fe doped
(010)
|
56
|
1.12
|
0.39
|
|
|
|
|
|
|
Diffusion Potential VD [eV] is calculated by Eq. VD=φs-Ed
Sn (010) and Sn (-201) donor lever (Ed): 7.4-60 meVD
uid (010) and uid (-201) donor lever (Ed): 7-30 meV
Sn (010) の場 #SnD1 VD=φs-Ed=1.63eV-40mev=1.59eV
Sn(-201) の場 #SnD2 VD=φs-Ed=1.14eV-40mev=1.10eV
uid (010) の場 #UID1 VD=φs-Ed=1.63eV-20mev=1.61eV
uid (-201)の場 #UID2 VD=φs-Ed=1.14eV-20mev=1.12eV
Depletion Layer w [nm]
(1) n-(010) Nd 6.8*1018/cm-3 (company data) V: 1.59eV (calculate)
ε: 10 (paper)
= = 16nm
Ed(x)=(eN/ε)(W-x)
(2) Sn-(-201) Nd 1.8*1018/cm-3 V: 1.10eV ε: 10
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